发明名称 |
USING LOW PRESSURE EPI TO ENABLE LOW RDSON FET |
摘要 |
A method for forming an epitaxial layer on a substrate may have the steps of: forming a heavily doped silicon substrate; depositing an epitaxial layer at sub atmospheric pressure on the heavily doped silicon substrate; and implanting dopant into the epitaxial layer by ion implantation to form a lightly doped epitaxial layer. |
申请公布号 |
US2012126341(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US201113291515 |
申请日期 |
2011.11.08 |
申请人 |
MICROCHIP TECHNOLOGY INCORPORATED |
发明人 |
DIX GREGORY;LEATHERWOOD PAM |
分类号 |
H01L29/78;H01L21/20 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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