REPLACEMENT METAL GATE WITH BORDERLESS CONTACT

摘要

Embodiments of the present invention provide a method of forming borderless contact (1001) for transistor in a replacement metal gate process. The method includes forming a gate (102) on top of a substrate and forming spacers (103) adjacent to sidewalls of the gate; lowering height of the spacers to expose a top portion of the sidewalls of the gate; depositing an etch- stop layer (301) covering the spacers and the upper portion of the sidewalls of the gate; making an opening (601) at a level that is above the spacers and in the upper portion of the sidewalls to expose the gate; and replacing material of the gate from the opening with a new gate material (701) thereby forming a replacement gate. The method further creates a via opening (901) in an inter- level dielectric layer surrounding the gate and spacers, with the via opening exposing the etch- stop layer; removing the etch- stop layer and fill the via opening with a metal material to form borderless contact.