| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetic tunnel junction cell having perpendicular anisotropy and an enhancement layer that allows for a low current and a high surface density. <P>SOLUTION: The magnetic tunnel junction cell includes a ferromagnetic free layer, an enhancement layer having a thickness of at least 15 Å, an oxide barrier layer, and a ferromagnetic reference layer. The enhancement layer and the oxide barrier layer are arranged between the ferromagnetic reference layer and the ferromagnetic free layer, and the oxide barrier layer is arranged adjacent to the ferromagnetic reference layer. All of the ferromagnetic free layer, the ferromagnetic reference layer, and the enhancement layer have an out-plane magnetization direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
