发明名称 |
METHOD OF FORMING E-FUSE IN REPLACEMENT METAL GATE MANUFACTURING PROCESS |
摘要 |
Embodiment of the present invention provides a method of forming electronic fuse or commonly known as e-fuse. The method includes forming a polysilicon structure and a field-effect-transistor (FET) structure together on top of a common semiconductor substrate, the FET structure having a sacrificial gate electrode; implanting at least one dopant into the polysilicon structure to create a doped polysilicon layer in at least a top portion of the polysilicon structure; subjecting the polysilicon structure and the FET structure to a reactive-ion-etching (RIE) process, the RIE process selectively removing the sacrificial gate electrode of the FET structure while the doped polysilicon layer being substantially unaffected by the RIE process; and converting the polysilicon structure including the doped polysilicon layer into a silicide to form the electronic fuse. |
申请公布号 |
US2012129312(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US20100951107 |
申请日期 |
2010.11.22 |
申请人 |
UTOMO HENRY K.;LI YING;LEAKE GERALD L.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
UTOMO HENRY K.;LI YING;LEAKE GERALD L. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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