发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRIC DEVICE |
摘要 |
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance. |
申请公布号 |
US2012126226(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US201213365498 |
申请日期 |
2012.02.03 |
申请人 |
KUWABARA HIDEAKI;YAMAMOTO HIROKO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KUWABARA HIDEAKI;YAMAMOTO HIROKO |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|