SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device which is provided with: a first gate electrode (125) that has a relatively large width in the gate length direction and a second gate electrode (126) that has a relatively small width in the gate length direction, said gate electrodes being formed on a p-type well (102) and extending parallel to each other; an LDD low concentration region (135) that is formed in the p-type well (102) between the first gate electrode (125) and the second gate electrode (126); and LDD medium concentration regions (134) that are formed in the p-type well (102) respectively at positions outside the first gate electrode (125) and the second gate electrode (126). The impurity concentration of the LDD low concentration region (135) is lower than the impurity concentration of the LDD medium concentration regions (134).