| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a stacked structure of a metal oxide thin film that can improve crystallinity of ZnO, can reduce the thickness of a ZnO thin film by the improvement, and can achieve sufficient electron field-effect mobility and high transmissivity. <P>SOLUTION: A stacked structure is composed of a first thin film, which is an amorphous film containing oxide of a metal element M1 of one or both of In and Sn, and a second thin film that is stacked on and in contact with the first thin film and contains at least ZnO. <P>COPYRIGHT: (C)2012,JPO&INPIT |
