| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a copper sputtering target material for a TFT which can reduce a tensile residual stress in a copper film which has been deposited even not changing a deposition condition (pressure in deposition, gas kind used for deposition or the like), and to provide a copper film for a TFT, and a sputtering method. <P>SOLUTION: The copper sputtering target material for a TFT comprises a copper material, and has a sputtering surface which consists of oxygen-free copper consisting of copper and inevitable impurities, or a copper alloy, and wherein a (111) surface occupancy proportion to a total of (111) surface, (200) surface, (220) surface, and (311) surface is at least 15%. <P>COPYRIGHT: (C)2012,JPO&INPIT |
