| 发明名称 |
ULTRA THIN DIE TO IMPROVE SERIES RESISTANCE OF A FET |
| 摘要 |
A method for producing a power field effect transistor (FET) device having a low series resistance between the drain and source when switched on has the steps of: forming a vertical power FET in a semiconductor die; and back-grinding the semiconductor die to a thickness of less than or equal to about 100 μm (4 mils) or less.
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| 申请公布号 |
US2012126313(A1) |
申请公布日期 |
2012.05.24 |
| 申请号 |
US201113288219 |
申请日期 |
2011.11.03 |
| 申请人 |
BRAITHWAITE ROHAN S.;YACH RANDY L.;JACKSON DANIEL J.;DIX GREGORY;MICROCHIP TECHNOLOGY INCORPORATED |
发明人 |
BRAITHWAITE ROHAN S.;YACH RANDY L.;JACKSON DANIEL J.;DIX GREGORY |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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