发明名称 |
Semiconductor Devices and Methods of Forming the Same |
摘要 |
A method of forming a semiconductor device may include forming a contact mold layer on a substrate; forming an interconnection mold layer on the contact mold layer that includes a material having an etching selectivity with respect to the contact mold layer; forming grooves in the interconnection mold layer that extend in a first direction and expose the contact mold layer; forming holes in the contact mold layer connected to the grooves by etching a part of the contact mold layer exposed by the groove; and forming contact portions in the holes and interconnections in the groove. A diffusion coefficient of mobile atoms in the contact mold layer is greater than a diffusion coefficient of mobile atoms in a nitride.
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申请公布号 |
US2012126421(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US201113270990 |
申请日期 |
2011.10.11 |
申请人 |
LEE YOUNG-HO;KIM KEONSOO;BACK HYUNCHUL;SHIN JINHYUN;CHOI SEUNGWOOK |
发明人 |
LEE YOUNG-HO;KIM KEONSOO;BACK HYUNCHUL;SHIN JINHYUN;CHOI SEUNGWOOK |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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