发明名称 |
TRANSISTOR DRIVEN 3D MEMORY |
摘要 |
A nonvolatile memory device with a first conductor extending in a first direction and a semiconductor element above the first conductor. The semiconductor element includes a source, a drain and a channel of a field effect transistor (JFET or MOSFET). The nonvolatile memory device also includes a second conductor above the semiconductor element, the second conductor extending in a second direction. The nonvolatile memory device also includes a resistivity switching material disposed between the first conductor and the semiconductor element or between the second conductor and the semiconductor element. The JFET or MOSFET includes a gate adjacent to the channel, and the MOSFET gate being self-aligned with the first conductor. |
申请公布号 |
WO2012068127(A2) |
申请公布日期 |
2012.05.24 |
申请号 |
WO2011US60812 |
申请日期 |
2011.11.15 |
申请人 |
SANDISK 3D LLC;MIHNEA, ANDREI;SAMACHISA, GEORGE |
发明人 |
MIHNEA, ANDREI;SAMACHISA, GEORGE |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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