发明名称 |
METHOD FOR MANUFACTURING A MOS-FIELD EFFECT TRANSISTOR |
摘要 |
A method for manufacturing a Power Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) has the steps of: implanting a base region of the Power MOSFET within an epitaxial layer of a semiconductor chip comprising an insulated gate structure, implanting a source link region on one side of the gate through a first mask, wherein the first mask is partially formed by an edge of the gate, the source link extending from a surface into the epitaxial layer and having a width defined by the first window, subsequently forming a spacer extending from the edge of the gate which defines the first window and forming a second mask which is partially formed by the spacer, and implanting a source region through the second mask. |
申请公布号 |
WO2012068201(A2) |
申请公布日期 |
2012.05.24 |
申请号 |
WO2011US60912 |
申请日期 |
2011.11.16 |
申请人 |
MICROCHIP TECHNOLOGY INCORPORATED;BRAITHWAITE, ROHAN, S.;DIX, GREGORY |
发明人 |
BRAITHWAITE, ROHAN, S.;DIX, GREGORY |
分类号 |
H01L29/08 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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