| 摘要 |
<p>The present invention relates to a thin film deposition method for forming a thin film containing silicon on a substrate by supplying a silicon precursor compound in a gaseous state. A silicon precursor compound having a heterocyclic amine group in which ring strains exist is used in a chemical vapor deposition method or an atomic layer deposition, thereby easily forming a thin film, enabling deposition at a low deposition temperature of 100-500 ?, precisely controlling thickness and composition, and forming a silicon oxide thin film, a silicon nitride thin film or a silicon composite film with a uniform thickness even on a substrate having a complex shape.</p> |
