| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a semiconductor device with high yield and high performance by avoiding complicated steps and obtaining high effective work function value. <P>SOLUTION: P-type source/drain regions 25p are formed on both sides of a dummy electrode 22 in an n-type active region 13 by introducing p-type impurity ions into the n-type active region 13 using the dummy electrode 22 as a mask, and then the formed source/drain regions 25 are heat-treated. After the heat treatment, an interlayer insulating film 26 is formed on the n-type active region 13 so as to cover the dummy electrode 22. The dummy electrode 22 is exposed from the formed interlayer insulating film 26, and then the exposed dummy electrode 22 is removed. Subsequently, a second metal electrode 27 is selectively formed in a recess 26a from which the dummy electrode 22 in the interlayer insulating film 26 is removed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
