| 摘要 |
A memory device includes: a transistor array having transistors; and memory elements provided, one for each of the transistors. The transistor array includes a substrate having diffusion layers on a surface thereof, parallel word lines on the substrate, parallel first bit lines provided in a direction perpendicular to the word lines, bit contact electrodes between the adjacent two word lines and connecting the first bit lines and the diffusion layers, and node contact electrodes at an opposite side to the bit contact electrodes with the two word lines in between and connected to the diffusion layers. The memory elements have lower electrodes connected to the node contact electrodes, memory layers on the lower electrodes and having resistance values reversibly changing by voltage application, and parallel second bit lines extending in the same direction as that of the first bit lines on the memory layers. |
