THIN-FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE

摘要

A TFT (20) comprises: a semiconductor layer (12sl) comprising an oxide semiconductor; a source electrode (13sd) and drain electrode (13dd) provided with a gap therebetween on the semiconductor layer (12sl); a gate insulating film (15) that covers the semiconductor layer portion between the source electrode (13sd) and drain electrode (13dd); and a gate electrode (18gd) that is disposed above the semiconductor layer (12sl) with the gate insulating film (15) interposed. The source electrode (13sd) is integrally formed with a source wire (13sl), and the gate electrode (18gd) is integrally formed with a gate wire (18gl). The semiconductor layer (12sl) extends also to the lower layer of the source wire (13sl). The source wire (13sl), source electrode (13sd) and drain electrode (13dd) are all arranged on the semiconductor layer (12sl).