| 摘要 |
A method for manufacturing a thin film transistor is provided to reduce the number of mask processes such that an existing nine-mask process is changed into a six-mask process, by using diffractive exposure. A first element(I) constitutes a pixel part, and a second element(II) and a third element(III) constitute a driving circuit part. A semiconductor of the third element is doped with first conductive type impurities. A semiconductor of the first element and a semiconductor of the third element are doped with second conductive type impurities. A conductive layer(145), an interlayer insulating film(147), and a photoresist film(150) are sequentially deposited on the resultant substrate. The photoresist film is partially etched through diffractive exposure. The interlayer insulating film, the conductive layer, and the semiconductor layer are pattern-etched using the partially etched photoresist film as an etching mask, thereby defining source and drain regions and an active region. The partially etched photoresist film is more etched to selectively expose the interlayer insulating film. The exposed interlayer insulating film and the conductive layer are selectively etched to form source and drain electrodes. The remaining photoresist film is removed, and then a gate insulating layer is formed on the resultant substrate. Gate electrodes for pixel part and driving circuit part are respectively formed on the gate insulating layer. A passivation layer is formed on the resultant substrate, and then the passivation layer is pattern-etched to expose the drain electrode for the pixel part. A pixel electrode, which is connected to the drain electrode for the pixel part, is formed.
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