| 摘要 |
PURPOSE: A CMOS image sensor is provided to improve a transfer property of a charge and maintain capacitance with the same level at pixels by periodically increasing a pinch-off voltage of a buried type CIS(CMOS Image Sensor) pixel. CONSTITUTION: A pixel area is formed in a substrate(210). A contact area(250) is formed in the substrate of the pixel area. A first conductive area(220) with the first density is formed on the substrate of the pixel area. A first conductive area(225) with the second density is formed on the substrate of the pixel area. A transfer transistor(240) is formed between the pixel area and the contact area.
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