发明名称 |
Semiconductor devices including Schottky diodes with controlled breakdown and methods of fabricating same |
摘要 |
<p>A semiconductor device (100) includes a semiconductor layer (114) having a first conductivity type, a metal contact (118) on the semiconductor layer and forming a Schottky junction (J4) with the semiconductor layer, and a semiconductor region (130) in the semiconductor layer. The semiconductor region and the semiconductor layer form a first p-n junction (J3) in parallel with the Schottky junction. The first p-n junction is configured to generate a depletion region in the semiconductor layer adjacent the Schottky junction when the Schottky junction is reversed biased to thereby limit reverse leakage current through the Schottky junction. The first p-n junction is further configured such that punch-through of the first p-n junction occurs at a lower voltage than a breakdown voltage of the Schottky junction when the Schottky junction is reverse biased.
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申请公布号 |
EP2418685(A3) |
申请公布日期 |
2012.05.23 |
申请号 |
EP20110187310 |
申请日期 |
2007.07.11 |
申请人 |
CREE, INC. |
发明人 |
ZHANG, QINGCHUN;RYU, SEI-HYUNG;AGARWAL, ANANT K. |
分类号 |
H01L29/872;H01L21/04;H01L29/06;H01L29/16 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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