发明名称 |
High-voltage MOS devices having gates extending into recesses of substrates |
摘要 |
An integrated circuit structure includes a high-voltage well (HVW) region in a semiconductor substrate; a first double diffusion (DD) region in the HVW region; and a second DD region in the HVW region. The first DD region and the second DD region are spaced apart from each other by an intermediate portion of the HVW region. A recess extends from a top surface of the semiconductor substrate into the intermediate portion of the HVW region and the second DD region. A gate dielectric extends into the recess and covers a bottom of the recess. A gate electrode is over the gate dielectric. A first source/drain region is in the first DD region. A second source/drain region is in the second DD region. |
申请公布号 |
US8183626(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US201113027097 |
申请日期 |
2011.02.14 |
申请人 |
CHU CHEN-LIANG;LIAO CHUN-TING;HUANG TSUNG-YI;CHEN FEI-YUH;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHU CHEN-LIANG;LIAO CHUN-TING;HUANG TSUNG-YI;CHEN FEI-YUH |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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