发明名称 Self-calibration method of a reading circuit of a nonvolatile memory
摘要 A self-calibration circuit of a nonvolatile memory includes a trimming data storage module, a sense amplifier module, a logic judgment module, and a scanning module. The nonvolatile memory circuit includes a memory cell array and the self-calibration circuit of the reading circuit of the nonvolatile memory. Without requiring an additional fuse or differential unit, the self-calibration circuit of a nonvolatile memory solves a deadlock problem securely and reliably without increasing circuit area and test cost, and be widely applied to OTP, MTP and EEPROM of various processes or various nonvolatile memories such as Flash EEPROM, MRAM, and FeRAM.
申请公布号 US8184490(B2) 申请公布日期 2012.05.22
申请号 US20090505599 申请日期 2009.07.20
申请人 WANG NAN;YAO XIANG;SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LTD. 发明人 WANG NAN;YAO XIANG
分类号 G11C7/00 主分类号 G11C7/00
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