发明名称 |
Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance |
摘要 |
Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer disposed above and in contact with the bottom electrode, and (3) a top electrode disposed above and in contact with the resistivity-switchable layer; wherein the resistivity-switchable layer includes a carbon-based material and a dielectric filler material. Numerous additional aspects are provided. |
申请公布号 |
US8183121(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20090415011 |
申请日期 |
2009.03.31 |
申请人 |
SCHRICKER APRIL D.;MAXWELL STEVEN;SANDISK 3D LLC |
发明人 |
SCHRICKER APRIL D.;MAXWELL STEVEN |
分类号 |
H01L21/20;H01L29/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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