| 摘要 |
A method for manufacturing an RF(Radio Frequency) inductor of a semiconductor device is provided to improve the yield by preventing an oxide layer from being formed on an RF inductor pattern existing portion using an inorganic layer. A first barrier layer(21) and a first metal seed layer(22) are formed on a semiconductor substrate(20) with a predetermined lower structure. A lower electrode(23) made of a metallic material is formed on the first metal seed layer. A photoresist layer is formed on the resultant structure. A deep via hole(25) for exposing the lower electrode to the outside and a shallow trench(26) adjacent to the via hole are formed through the photoresist layer. A second barrier layer(27) and a second metal seed layer(28) are formed on the resultant structure. Then, an inorganic BARC(Bottom Anti-Reflective Coating)(29) is formed on the entire surface of the resultant structure and performed with an etch back process until the second metal seed layer is exposed to the outside.
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