发明名称 Manufacturing method for a buried circuit structure
摘要 A manufacturing method for a buried circuit structure includes providing a substrate having at least a trench therein, forming a conductive layer having a top lower than an opening of the trench in the trench, performing a selective metal chemical vapor deposition (CVD) to form a metal layer having a top lower than the substrate in the trench, and forming a protecting layer filling the trench on the metal layer.
申请公布号 US8183146(B2) 申请公布日期 2012.05.22
申请号 US20100980349 申请日期 2010.12.29
申请人 FENG TAI-SHENG;JUNG LE-TIEN;TAIWAN MEMORY COMPANY 发明人 FENG TAI-SHENG;JUNG LE-TIEN
分类号 H01L21/4763;H01L21/302;H01L21/44 主分类号 H01L21/4763
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