发明名称 |
Manufacturing method for a buried circuit structure |
摘要 |
A manufacturing method for a buried circuit structure includes providing a substrate having at least a trench therein, forming a conductive layer having a top lower than an opening of the trench in the trench, performing a selective metal chemical vapor deposition (CVD) to form a metal layer having a top lower than the substrate in the trench, and forming a protecting layer filling the trench on the metal layer. |
申请公布号 |
US8183146(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20100980349 |
申请日期 |
2010.12.29 |
申请人 |
FENG TAI-SHENG;JUNG LE-TIEN;TAIWAN MEMORY COMPANY |
发明人 |
FENG TAI-SHENG;JUNG LE-TIEN |
分类号 |
H01L21/4763;H01L21/302;H01L21/44 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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