发明名称 |
Reduced defectivity in contacts of a semiconductor device comprising replacement gate electrode structures by using an intermediate cap layer |
摘要 |
Superior contact elements may be formed in semiconductor devices in which sophisticated replacement gate approaches may be applied. To this end, a dielectric cap layer is provided prior to patterning the interlayer dielectric material so that any previously created cracks may be reliably sealed prior to the deposition of the contact material, while the removal of any excess portion thereof may be performed without an undue interaction with the electrode metal of the gate electrode structures. Consequently, a significantly reduced defect rate may be achieved. |
申请公布号 |
US8183139(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20100963908 |
申请日期 |
2010.12.09 |
申请人 |
MARXSEN GERD;HEINRICH JENS;GLOBALFOUNDRIES INC. |
发明人 |
MARXSEN GERD;HEINRICH JENS |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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