发明名称 |
Method for fabricating MOS transistor |
摘要 |
The invention discloses a method for fabricating a MOS transistor. A substrate having thereon a gate structure is provided. A silicon nitride layer is deposited on the gate structure. A dry etching process is then performed to define a silicon nitride spacer on each sidewall of the gate structure and a recess in a source/drain region on each side of the gate structure. A transitional layer covering the gate structure and the recess is deposited. A pre-epitaxial clean process is performed to remove the transitional layer. The substrate is subjected to a pre-bake process. An epitaxial growth process is performed to grow an embedded SiGe layer in the recess. The disposable silicon nitride spacer is removed. |
申请公布号 |
US8183118(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20100868739 |
申请日期 |
2010.08.26 |
申请人 |
LU TSUO-WEN;HSIAO TSAI-FU;WANG YU-REN;CHAN SHU-YEN;UNITED MICROELECTRONICS CORP. |
发明人 |
LU TSUO-WEN;HSIAO TSAI-FU;WANG YU-REN;CHAN SHU-YEN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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