| 发明名称 |
Field-effect transistor (FET) with embedded diode |
| 摘要 |
A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within the gap between the first and second portions. A plurality of FETs also may be provided with adjacent FETs electrically isolated. |
| 申请公布号 |
US8183658(B2) |
申请公布日期 |
2012.05.22 |
| 申请号 |
US20080128566 |
申请日期 |
2008.05.28 |
| 申请人 |
MEADOWS RONALD C.;WINSLOW THOMAS A.;COBHAM ELECTRONIC SYSTEMS CORPORATION |
发明人 |
MEADOWS RONALD C.;WINSLOW THOMAS A. |
| 分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
| 代理机构 |
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代理人 |
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| 主权项 |
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