发明名称 |
Solid state imaging device comprising charge retention region and buried layer below gate |
摘要 |
A solid state imaging device, includes: a sensor cell array having a plurality of sensor cells arranged in a matrix on a substrate, each sensor cell including: a photoelectric transducer provided in the substrate and generating photo-generated electric charges according to an incident light; a transfer gate formed on the substrate with a gate insulating layer therebetween; a charge retention region formed under the gate insulating layer and storing the photo-generated electric charges that are transferred from the photoelectric transducer by applying a predetermined potential to the transfer gate; a buried layer formed between the charge retention region and the gate insulating layer; and a floating diffusion storing the photo-generated electric charges that are transferred from the charge retention region by applying a predetermined potential to the transfer gate. |
申请公布号 |
US8183657(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20050227022 |
申请日期 |
2005.09.15 |
申请人 |
KUWAZAWA KAZUNOBU;SEIKO EPSON CORPORATION |
发明人 |
KUWAZAWA KAZUNOBU |
分类号 |
H01L31/0352;H01L27/146;H04N5/335;H04N5/361;H04N5/369;H04N5/372 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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