发明名称 |
Semiconductor device having silicide layer completely occupied amorphous layer formed in the substrate and an interface junction of (111) silicon plane |
摘要 |
A semiconductor device includes diffusion layers formed in a SOI layer under a side-wall, a channel formed between the diffusion layers, silicide layers sandwiching the diffusion layers wherein interface junctions between the diffusion layers and the silicide layers are (111) silicon planes. |
申请公布号 |
US8183643(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20010962119 |
申请日期 |
2001.09.26 |
申请人 |
ICHIMORI TAKASHI;HIRASHITA NORIO;OKI SEMICONDUCTOR CO., LTD. |
发明人 |
ICHIMORI TAKASHI;HIRASHITA NORIO |
分类号 |
H01L21/28;H01L21/265;H01L21/336;H01L29/45;H01L29/78;H01L29/786 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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