发明名称 |
NROM flash memory devices on ultrathin silicon |
摘要 |
An NROM flash memory cell is implemented in an ultra-thin silicon-on-insulator structure. In a planar device, the channel between the source/drain areas is normally fully depleted. An oxide layer provides an insulation layer between the source/drain areas and the gate insulator layer on top. A control gate is formed on top of the gate insulator layer. In a vertical device, an oxide pillar extends from the substrate with a source/drain area on either side of the pillar side. Epitaxial regrowth is used to form ultra-thin silicon body regions along the sidewalls of the oxide pillar. Second source/drain areas are formed on top of this structure. The gate insulator and control gate are formed on top. |
申请公布号 |
US8183625(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US201113051050 |
申请日期 |
2011.03.18 |
申请人 |
FORBES LEONARD;MICRON TECHNOLOGY, INC. |
发明人 |
FORBES LEONARD |
分类号 |
H01L29/792;H01L21/28;H01L29/51;H01L29/92 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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