| 摘要 |
A nonvolatile memory device includes a memory cell array, including a first memory cell group configured to store data and a second memory cell group configured to store operation information, including first and second program start voltages, a page buffer unit, including page buffers each configured to store program data for memory cells or store data read from the memory cells, and a control unit configured to, when a program operation is first performed after power is supplied, count a number of program pulses until a verification operation using a first verification voltage is a pass, compare the counted number and a first number of program pulses, select either the first or second program start voltages according to a result of the comparison, and control the program operation to be performed using the selected program start voltage until the power is off. |
