发明名称 Correcting substrate for charged particle beam lithography apparatus
摘要 A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.
申请公布号 US8183544(B2) 申请公布日期 2012.05.22
申请号 US20090408212 申请日期 2009.03.20
申请人 TSURUTA KAORU;KAMIKUBO TAKASHI;NISHIMURA RIEKO;YOSHITAKE SHUSUKE;TAMAMUSHI SHUICHI;NUFLARE TECHNOLOGY, INC. 发明人 TSURUTA KAORU;KAMIKUBO TAKASHI;NISHIMURA RIEKO;YOSHITAKE SHUSUKE;TAMAMUSHI SHUICHI
分类号 A61N5/00 主分类号 A61N5/00
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