发明名称 |
Correcting substrate for charged particle beam lithography apparatus |
摘要 |
A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.
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申请公布号 |
US8183544(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20090408212 |
申请日期 |
2009.03.20 |
申请人 |
TSURUTA KAORU;KAMIKUBO TAKASHI;NISHIMURA RIEKO;YOSHITAKE SHUSUKE;TAMAMUSHI SHUICHI;NUFLARE TECHNOLOGY, INC. |
发明人 |
TSURUTA KAORU;KAMIKUBO TAKASHI;NISHIMURA RIEKO;YOSHITAKE SHUSUKE;TAMAMUSHI SHUICHI |
分类号 |
A61N5/00 |
主分类号 |
A61N5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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