发明名称 |
Methods for providing void-free layer for semiconductor assemblies |
摘要 |
A method of providing a substantially void free layer for one or more flip chip assemblies, or one or more microelectronic components, utilizing a curable encapsulant. Also disclosed is a method of injecting an encapsulant into an assembly and a method of treating a microelectronic component to form a void free layer.
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申请公布号 |
USRE43404(E1) |
申请公布日期 |
2012.05.22 |
申请号 |
US20100728630 |
申请日期 |
2010.03.22 |
申请人 |
DISTEFANO THOMAS H.;FJELSTAD JOSEPH;TESSERA, INC. |
发明人 |
DISTEFANO THOMAS H.;FJELSTAD JOSEPH |
分类号 |
H01L21/44;H01L21/56;H01L21/68;H01L23/31;H01L23/495 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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