发明名称 Methods for providing void-free layer for semiconductor assemblies
摘要 A method of providing a substantially void free layer for one or more flip chip assemblies, or one or more microelectronic components, utilizing a curable encapsulant. Also disclosed is a method of injecting an encapsulant into an assembly and a method of treating a microelectronic component to form a void free layer.
申请公布号 USRE43404(E1) 申请公布日期 2012.05.22
申请号 US20100728630 申请日期 2010.03.22
申请人 DISTEFANO THOMAS H.;FJELSTAD JOSEPH;TESSERA, INC. 发明人 DISTEFANO THOMAS H.;FJELSTAD JOSEPH
分类号 H01L21/44;H01L21/56;H01L21/68;H01L23/31;H01L23/495 主分类号 H01L21/44
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