发明名称 |
Thin film transistor array panel |
摘要 |
A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer. |
申请公布号 |
US8183570(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20100946953 |
申请日期 |
2010.11.16 |
申请人 |
KIM DONG-GYU;CHO SUNG-HAENG;KIM HYUNG-JUN;KIM SUNG-RYUL;CHOI YONG-MO;SAMSUNG ELECTRONICS OC., LTD. |
发明人 |
KIM DONG-GYU;CHO SUNG-HAENG;KIM HYUNG-JUN;KIM SUNG-RYUL;CHOI YONG-MO |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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