发明名称 Thin film transistor array panel
摘要 A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.
申请公布号 US8183570(B2) 申请公布日期 2012.05.22
申请号 US20100946953 申请日期 2010.11.16
申请人 KIM DONG-GYU;CHO SUNG-HAENG;KIM HYUNG-JUN;KIM SUNG-RYUL;CHOI YONG-MO;SAMSUNG ELECTRONICS OC., LTD. 发明人 KIM DONG-GYU;CHO SUNG-HAENG;KIM HYUNG-JUN;KIM SUNG-RYUL;CHOI YONG-MO
分类号 H01L29/04 主分类号 H01L29/04
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