发明名称 Temperature controlled ion source
摘要 An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.
申请公布号 US8183542(B2) 申请公布日期 2012.05.22
申请号 US20100754318 申请日期 2010.04.05
申请人 BENVENISTE VICTOR;KOO BON-WOONG;PATEL SHARDUL;SINCLAIR FRANK;VARION SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 BENVENISTE VICTOR;KOO BON-WOONG;PATEL SHARDUL;SINCLAIR FRANK
分类号 G21K5/10 主分类号 G21K5/10
代理机构 代理人
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