发明名称 |
Semiconductor die with integrated electro-static discharge device |
摘要 |
A semiconductor die is described. This semiconductor die includes an electro-static discharge (ESD) device with a metal component coupled to an input-output (I/O) pad, and coupled to a ground voltage via a signal line. Moreover, adjacent edges of the metal component and the I/O pad are separated by a spacing that defines an ESD gap. When a field-emission or ionization current flows across the ESD gap, the metal component provides a discharge path to the ground voltage for transient ESD signals. Furthermore, the ESD gap is at least partially enclosed so that there is gas in the ESD gap.
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申请公布号 |
US8183593(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20090580658 |
申请日期 |
2009.10.16 |
申请人 |
DROST ROBERT J.;HOPKINS ROBERT D.;CHOW ALEX;ORACLE AMERICA, INC. |
发明人 |
DROST ROBERT J.;HOPKINS ROBERT D.;CHOW ALEX |
分类号 |
H01L29/72;H01L23/552;H01L23/62;H01L29/73;H01L29/74;H01L31/111 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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