发明名称 Semiconductor device and fabricating method thereof
摘要 A semiconductor device is provided. The semiconductor device comprises a semiconductor die having bond pads, each of which consists of a first bond pad made of a material whose ionization tendency is relatively low and a second bond pad made of a material whose ionization tendency is relatively high. The second bond pads function as sacrificial anodes to prevent the occurrence of galvanic corrosion at the interfaces between the first bond pads and conductive wires. In an embodiment, the upper surfaces of the second bond pads are marked instead of those of the first bond pads, which reduces the number of defects in the first bond pads. A method for fabricating the semiconductor device is also provided.
申请公布号 US8183683(B1) 申请公布日期 2012.05.22
申请号 US20090549068 申请日期 2009.08.27
申请人 KIM JOON SU;PARK JUNG SOO;HWANG TAE KYUNG;AMKOR TECHNOLOGY, INC. 发明人 KIM JOON SU;PARK JUNG SOO;HWANG TAE KYUNG
分类号 H01L23/488 主分类号 H01L23/488
代理机构 代理人
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