发明名称 Method and apparatus for predicting device electrical parameters during fabrication
摘要 A method includes providing a set of initial characteristic values associated with the semiconductor device. A first fabrication process is performed on the semiconductor device. Fabrication data associated with the first fabrication process is collected. At least one of the initial characteristic values is replaced with the fabrication data collected for the first fabrication process to generate a first modified set of characteristic values. A first value for at least one electrical characteristic of the semiconductor device is predicted based on the modified set of characteristic values. A system includes a first process tool, a first data collection unit, and a prediction unit. The first process tool is configured to perform a first fabrication process on the semiconductor device. The first data collection unit is configured to collect fabrication data associated with the first fabrication process. The prediction unit is configured to provide a set of initial characteristic values associated with the semiconductor device, replace at least one of the initial characteristic values with the fabrication data collected for the first fabrication process to generate a first modified set of characteristic values, and predict a first value for at least one electrical characteristic of the semiconductor device based on the modified set of characteristic values.
申请公布号 US8185230(B2) 申请公布日期 2012.05.22
申请号 US20020225638 申请日期 2002.08.22
申请人 MILLER MICHAEL L.;BODE CHRISTOPHER A.;ADVANCED MICRO DEVICES, INC. 发明人 MILLER MICHAEL L.;BODE CHRISTOPHER A.
分类号 G06F17/50;G06F19/00;H01L21/00;H01L21/02;H01L21/66 主分类号 G06F17/50
代理机构 代理人
主权项
地址