发明名称 |
Stack-type semiconductor device |
摘要 |
A stack-type semiconductor device and a method of manufacturing the same are provided. The stack-type semiconductor device includes an insulation layer on a single-crystalline substrate, a contact plug penetrating the insulation layer to contact the single-crystalline substrate, an upper semiconductor pattern including an impurity region and a gate structure positioned between the impurity regions on the upper semiconductor pattern. An upper surface of the contact plug contacts a lower surface of the semiconductor pattern. An operation failure of the stack-type semiconductor device is reduced since the upper semiconductor pattern is electrically connected to the single-crystalline semiconductor substrate. |
申请公布号 |
US8183634(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20090536775 |
申请日期 |
2009.08.06 |
申请人 |
PARK JUN-BEOM;JUNG SOON-MOON;KIM HAN-SOO;JANG JAE-HOON;JEONG JAE-HUN;YUN JONG-IN;HWANG MI-SO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JUN-BEOM;JUNG SOON-MOON;KIM HAN-SOO;JANG JAE-HOON;JEONG JAE-HUN;YUN JONG-IN;HWANG MI-SO |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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