发明名称 |
Stacked trench metal-oxide-semiconductor field effect transistor device |
摘要 |
Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device. |
申请公布号 |
US8183629(B2) |
申请公布日期 |
2012.05.22 |
申请号 |
US20080050929 |
申请日期 |
2008.03.18 |
申请人 |
PATTANAYAK DEVA;QI JASON (JIANHAI);BAI YUMING;LUI KAM-HONG;WONG RONALD;VISHAY-SILICONIX |
发明人 |
PATTANAYAK DEVA;QI JASON (JIANHAI);BAI YUMING;LUI KAM-HONG;WONG RONALD |
分类号 |
H01L0027/000088 |
主分类号 |
H01L0027/000088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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