发明名称 Etching liquid, etching method, and method of manufacturing electronic component
摘要 An etching liquid used for selectively etching silicon nitride, the etching liquid includes: water; a first liquid that can be mixed with the water to produce a mixture liquid having a boiling point of 150° C. or more; and a second liquid capable of producing protons (H+). Alternatively, an etching liquid includes: water; phosphoric acid; and sulfuric acid, the phosphoric acid and the sulfuric acid having a volume ratio of 300:32 to 150:300.
申请公布号 US8183163(B2) 申请公布日期 2012.05.22
申请号 US20070690438 申请日期 2007.03.23
申请人 EGUCHI KATSUYA;HAYAMIZU NAOYA;FUKUI HIROYUKI;KABUSHIKI KAISHA TOSHIBA 发明人 EGUCHI KATSUYA;HAYAMIZU NAOYA;FUKUI HIROYUKI
分类号 H01L21/302;H01L21/461 主分类号 H01L21/302
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