| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a gate resistance and a gate-source capacitance by adding metal to a gate. CONSTITUTION: An epitaxial layer(702) is formed on the upper side of a substrate. A dually diffused P-well(716,717) includes a p-well with low density and a p-well with high density. A junction thin film is on the upper side of the epitaxial layer with a multi structure through a selective epitaxial growth and is laminated on the source and drain sides. Source and drain electrodes are formed on the upper side of the junction thin film. A gate electrode of a self aligned multi structure is formed on the upper side of the substrate. A faraday shield surrounds the gate.
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