发明名称 apparatus and method for producing quantum dot having multiple heating area
摘要 <p>Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating furnace with a plurality of heating areas providing different temperature conditions to heat the precursor mixture. Between the heating areas, a buffer may be installed which provides a low-temperature condition to prevent addition nucleation. Through this configuration, nucleation is separated from nuclear growth, uniformity in particle size of quantum dots is improved, which enables the mass-production of quantum dots, rather than a quantum dot producing apparatus with a single heating area that provides a constant temperature condition.</p>
申请公布号 KR101147840(B1) 申请公布日期 2012.05.21
申请号 KR20080105368 申请日期 2008.10.27
申请人 发明人
分类号 B82B3/00;B82Y20/00 主分类号 B82B3/00
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