RESISTANCE CHANGE MEMORY DEVICE, AND RESISTANCE CHANGE MEMORY DEVICE CROSS POINT ARRAY

摘要

PURPOSE: A resistance change memory device and a resistance change memory device cross point array are provided to program data without interference between cells. CONSTITUTION: A node is arranged between a top electrode(50) and a bottom electrode(10). A bottom variable resistor is connected to the bottom electrode and the node. A top variable resistor is connected to the top electrode and the node. Any one among the variable resistors is set to a low resistance in a first positive electric field between the top electrode and the bottom electrode and is set to a high resistance in a first negative electric field between the top electrode and the bottom electrode. Another variable resistor is set to a low resistance in a second negative electric field between the top electrode and the bottom electrode and is set to a high resistance in a second positive electric field between the top electrode and the bottom electrode.