发明名称 |
METHOD FOR TEXTURING THE SURFACE OF A SILICON SUBSTRATE, AND TEXTURED SILICON SUBSTRATE FOR A SOLAR CELL |
摘要 |
The invention relates to a method for texturing the surface of a gaseous phase silicon substrate, and to a textured silicon substrate for a solar cell. The method includes at least a step a) of exposing the surface to an SF6/O2 radiofrequency plasma for a duration of 2 to 30 minutes in order to produce a silicon substrate having a textured surface having pyramidal structures, the SF6/O2 ratio being 2 to 10. During step a) the power density generated using the radiofrequency plasma is greater than or equal to 2500 mW/cm2, and the SF6/O2 pressure in the reaction chamber is lower than or equal to 100 mTorrs, so as to produce a silicon substrate having a textured surface having inverted pyramidal structures. |
申请公布号 |
KR20120051047(A) |
申请公布日期 |
2012.05.21 |
申请号 |
KR20127004972 |
申请日期 |
2010.08.23 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;ECOLE POLYTECHNIQUE |
发明人 |
ROCA I CABARROCAS PERE;MORENO MARIO;DAINEKA DIMITRI |
分类号 |
H01L31/18;H01L31/0236;H01L31/042 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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