SEMICONDUCTOR DEVICES HAVING VERTICAL CHANNEL TRANSISTORS AND METHODS FOR FABRICATING THE SAME
摘要
PURPOSE: A semiconductor device which includes a vertical channel transistor and a manufacturing method thereof are provided to arrange a body contact which is directly connected to a vertical channel, thereby providing a movement route of a hole piled on the vertical channel to a semiconductor substrate. CONSTITUTION: A word line(170) is extended to a first horizontal direction from the upper part of a semiconductor substrate(100). The word line is divided into a pillar shape vertical gate(174) and an extension line(172). A bit line(120) is extended in a second horizontal direction between the semiconductor substrate and the word line. An active pillar(110) is arranged respectively vertical to the bit line and the word line. A capacitor(180) is electrically connected to a vertical channel transistor(10) through a contact plug(182).
申请公布号
KR20120050820(A)
申请公布日期
2012.05.21
申请号
KR20100112260
申请日期
2010.11.11
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, DAE IK;HONG, HYEONG SUN;HWANG, YOO SANG;CHUNG, HYUN WOO