发明名称 SEMICONDUCTOR DEVICES HAVING VERTICAL CHANNEL TRANSISTORS AND METHODS FOR FABRICATING THE SAME
摘要 PURPOSE: A semiconductor device which includes a vertical channel transistor and a manufacturing method thereof are provided to arrange a body contact which is directly connected to a vertical channel, thereby providing a movement route of a hole piled on the vertical channel to a semiconductor substrate. CONSTITUTION: A word line(170) is extended to a first horizontal direction from the upper part of a semiconductor substrate(100). The word line is divided into a pillar shape vertical gate(174) and an extension line(172). A bit line(120) is extended in a second horizontal direction between the semiconductor substrate and the word line. An active pillar(110) is arranged respectively vertical to the bit line and the word line. A capacitor(180) is electrically connected to a vertical channel transistor(10) through a contact plug(182).
申请公布号 KR20120050820(A) 申请公布日期 2012.05.21
申请号 KR20100112260 申请日期 2010.11.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DAE IK;HONG, HYEONG SUN;HWANG, YOO SANG;CHUNG, HYUN WOO
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
代理机构 代理人
主权项
地址