| 摘要 |
PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve luminous efficiency and color representation by emitting white light using a nano structure. CONSTITUTION: An active layer(300) is laminated on an n type semiconductor layer(200). A p type semiconductor layer(400) is laminated on the active layer. The n type semiconductor layer, the active layer, and the p type semiconductor layer include a concave-convex part including a protrusion area and a non-protrusion area. An insulation layer(500) surrounds the sides of the protrusion area and the non-protrusion area.
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