| 摘要 |
Disclosed is a silicon photoelectric multiplier having a cell structure, which includes a first type silicon substrate; a plurality of cells including a first type epitaxial layer formed on the substrate, a high concentration first type conductive layer formed on the epitaxial layer, and a high concentration second type conductive layer doped with a second type opposite the first type and formed on the high concentration first type conductive layer; a trench formed to optically separate the plurality of cells; and a guard ring formed on an outer wall of the trench so as to reach a bottom surface of the first type epitaxial layer, thus further increasing the degree of optical separation to thereby increase light detection efficiency.
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