| 摘要 |
PURPOSE: A semiconductor memory device and an erasing method thereof are provided to improve an erase property of a memory cell in a memory block by boosting a pass voltage or an erase verification voltage as well as an erase voltage applied to a word line. CONSTITUTION: A plurality of memory blocks include memory cells. A voltage supply circuit(140) provides an erase voltage for erasing a selected memory block and a verification voltage for an erase verification. A control logic(150) divides a word line group with a preset number of word line units in an erase verification after the selected memory block is erased, and controls the voltage supply circuit to gradually increase an erase verification voltage or pass voltage. |
