SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

The problem addressed by the present invention is to achieve both increased gain and increased bandwidth (in other words, achieving both a reduction in gate-drain capacitance and a reduction in source-drain capacitance). The present invention is provided with: a GaN channel layer (3) through which electrons travel; a barrier layer (4) that contains N and at least one of In, Al, and Ga and that is provided over the GaN channel layer in order to form a two-dimensional electron gas in the GaN channel layer; and a gate electrode (8), a source electrode (6), and a drain electrode (7). The present invention is further provided with a plate (20) that is between the gate electrode (8) and the drain electrode (7), is provided in a manner so as to contact a portion of the barrier layer (4), and is formed from a polarized material.